硕士研究生指导教师简介 |
姓 名 |
王峰 |

|
性 别 |
男 |
出生年月 |
1988.06 |
最高学历、学位 |
博士研究生 |
职 称 |
副研究员 |
职 务 |
无 |
电子邮箱 |
wangf@nanoctr.cn |
一、基本情况:
王峰,国家纳米科学中心副研究员,中科院青促会会员,中国科学院大学岗位教师,苏州科技大学硕士生导师(兼职)。2017年于中国科学院大学获得博士学位,之后进入中国科学院半导体研究所开展博士后研究工作,2019年加入国家纳米科学中心。主要研究方向为新型神经形态计算器件和系统,涉及二维半导体薄膜的可控制备、新型神经形态电子和光电子器件、以及神经形态计算原型芯片设计和硬件系统开发等。作为项目负责人主持了国家自然科学基金青年基金、面上项目、联合基金重点项目等。指导学生多次荣获中国科学院院长奖、国家优秀研究生奖及优秀联培学生奖学金等荣誉。
本人所在课题组依托于国家纳米科学中心纳米系统与多级次制造中国科学院重点实验室,搭建了覆盖半导体生长、表征、器件制备及测试的全链条科研平台。组内核心仪器设备包括:1)电子束曝光(EBL)系统一套;2)用于材料生长的分子束外延(MBE)一套、脉冲激光沉积系统(PLD)一套、化学气相沉积系统(CVD管式炉)6套;3)用于材料形貌、结构基础表征的光学显微镜三台;4)用于定向转移的微操作台三台;5)Keithley 4200、Keysight 1500半导体测试系统各一套;6)NI矩阵测试系统一套;7)可做高温的Everbeing BD4探针台测试系统一套、可做低温变温的Lakeshore TTPX探针台系统一套;8)器件引线机(Wire Bonder);9)紫外、可见到红外波段的多种激光器;10)Raman&AFM联用近场光学系统;11)热蒸发镀膜设备两套;12)原子层沉积(ALD)系统两套;13)反应离子刻蚀(RIE)一套;14)手套箱等。
二、主要研究领域及学术成就:
本人长期专注于新型神经形态电子器件与系统领域,首次在国际上实现晶圆级二维半导体碲薄膜的可控生长;刷新了二维浮栅存储器单单元权重存储数的纪录;率先在硬件层面完成基于二维浮栅存储器阵列的神经形态计算功能验证。近年来以第一和通讯作者身份在Nature Electronics、Nature Synthesis、Nature Communications、Nano Letters、Advanced Materials等学术期刊发表SCI论文30余篇,含ESI高被引论文两篇。相关成果获北京市科技奖一等奖、中国材料研究学会科技奖一/二等奖、IOP中国高被引作者奖等奖项。
三、代表性科研成果:
1. Shuhui Li, Haoyu Wei,Yutong Xiong, Zhenxing Wang*, Feng Wang*, Pengyu Zhang, Yuchen Cai, Yuhan Zhu, Xueying Zhan, Qingdao Zeng*, Zhenpeng Hu*, Jun He*. Synthesis of wafer-scale uniaxially oriented tellurium films via molecular engineering. Nature Synthesis 2026, DOI: 10.1038/s44160-025-00958-6.
2. Ruiqing Cheng, Feng Wang (co-first), Lei Yin, Zhenxing Wang, Yao Wen, Tofik Ahmed Shifa and Jun He*. High-performance, multifunctional devices based on asymmetric van der Waals heterostructures. Nature Electronics 2018. 1, 356.
3. Yuhan Zhu, Feng Wang*, Shuhui Li, Chen Shen, Yuchen Cai, Tao Yan, Fuyuan Zhang, Yanrong Wang, Xueying Zhan, Kai Xu, Hao Wang*, Hongbin Zhang, Zhenxing Wang*, and Jun He*. Metallic tellurium for p-type contacts of two-dimensional MoTe2 field-effect transistors. Nature Communications 2026, 17, 1180.
4. Yanrong Wang, Yuchen Cai, Feng Wang*, Tao Yan, Shuhui Li,Mingyang Cao, Ruohao Hong, Baoxing Zhai, Kai Xu, Xueying Zhan, Jun He & Zhenxing Wang*. 11-bit two-dimensional floating-gate Memories, Nature Communications 2025, 16:9268.
5. Yuchen Cai, Jia Yang, Yutang Hou, Feng Wang*, Lei Yin, Shuhui Li, Yanrong Wang, Tao Yan, Shan Yan, Xueying Zhan, Jun He & Zhenxing Wang*. 8-bit states in 2D floating-gate memories using gate-injection mode for large-scale convolutional neural networks, Nature Communications 2025, 16: 2649.
6. Xinyuan Wang, Yuhan Zhu, Feng Wang*, Jie Sun, Yuchen Cai, Shuhui Li,* Yanrong Wang, Tao Yan, Xueying Zhan, Kai Xu, Jun He, and Zhenxing Wang*. In-Sensor Polarization Convolution Based on Ferroelectric-Reconfigurable Polarization-Sensitive Photodiodes, Advanced Materials 2025, 37, 2420333.
7. Tao Yan, Yuchen Cai, Can Wang,* Shuhui Li, Xiaokang Yao, Rui Wang, Xueying Zhan, Erjia Guo, Chen Ge, Meng He, Guozhen Yang, Feng Wang*, Zhenxing Wang,* and Kuijuan Jin*. In-Sensor Compressed Imaging with Reconstruction-Free Recognition via Ferroelectric Photodiodes, Nano Letters 2025, 25, 13014.
8. Yujia Yan, Tao Yan, Feng Wang*, Yuhan Zhu, Shuhui Li, Yuchen Cai, Fuyuan Zhang, Yanrong Wang, Xiaolin Liu, Kai Xu, Jun He, Xueying Zhan,* Jia Lin,* and Zhenxing Wang*. CMOS-Compatible Fabrication of 2D Semiconductor-Based CFETs via High k Dielectric van der Waals Encapsulation. Nano Letters 2025, 25, 6125.
9. Jia Yang, Yuchen Cai, Feng Wang*, Shuhui Li, Xueying Zhan, Kai Xu, Jun He, and Zhenxing Wang*. A Reconfigurable Bipolar Image Sensor for High-Efficiency Dynamic Vision Recognition. Nano Letters 2024, 24, 5862.
10. Yanrong Wang,* Yuchen Cai, Shuhui Li, Xueying Zhan, Ruiqing Cheng, Zhenxing Wang, Jun He,* and Feng Wang*. Ferroelectric Polarization Coupling Effect in BiFeO3/α-In2Se3 Ferroelectric Field Effect Transistor for Stable Non-volatile Memory. Small 2025, 21, 2409922.
11. Yanrong Wang, Yuchen Cai, Feng Wang*, Jia Yang, Tao Yan, Shuhui Li, Zilong Wu, Xueying Zhan, Kai Xu, Jun He, and Zhenxing Wang*. A Three-Dimensional Neuromorphic Photosensor Array for Nonvolatile In-Sensor Computing. Nano Letters 2023, 23, 4524.
12. Tao YAN, Yuchen CAI, Yanrong WANG, Jia YANG, Shuhui LI, Xueying ZHAN, Fengmei WANG, Ruiqing CHENG, Feng Wang*, Jun HE & Zhenxing WANG*. Near-infrared optoelectronic synapses based on a Te/α-In2Se3 heterojunction for neuromorphic computing. Science China Information Science 2023, 66 160404.
13. Zilong Wu, Yuhan Zhu, Feng Wang,* Chuyun Ding, Yanrong Wang, Xueying Zhan, Jun He, and Zhenxing Wang*. Lowering Contact Resistances of Two-Dimensional Semiconductors by Memristive Forming. Nano Letters 2022, 22, 7094−7103.
14. Feng Wang, Bin Tu (co-first), Peng He (co-first), Zhenxing Wang, Lei Yin, Ruiqing Cheng, Junjun Wang, Qiaojun Fang, and Jun He*. Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors. Advanced Materials 2019. 31, 1805317.
15. Feng Wang, Jia Liu (co-first), Wenhao Huang, Ruiqing Cheng, Lei Yin, Junjun Wang, Marshet Getaye Sendeku, Yu Zhang, Xueying Zhan, Chongxin Shan, Zhenxing Wang,∗ Jun He∗. Subthermionic field-effect transistors with sub-5 nm gate lengths based on van der Waals ferroelectric heterostructures. Science Bulletin 2020. 65, 1444–1450.
16. Wenhao Huang, Feng Wang (co-first), Lei Yin, Ruiqing Cheng, Zhenxing Wang, Marshet Getaye Sendeku, Junjun Wang, Ningning Li, Yuyu Yao, and Jun He*. Gate-Coupling-Enabled Robust Hysteresis for Nonvolatile Memory and Programmable Rectifier in Van der Waals Ferroelectric Heterojunctions. Advanced Materials 2020, 32, 1908040.
17. Feng Wang, Zhenxing Wang, Kai Xu, Fengmei Wang, Qisheng Wang, Yun Huang, Lei Yin, and Jun He*. Tunable GaTe-MoS2 van der Waals p−n Junctions with Novel Optoelectronic Performance. Nano Letters 2015, 15 (11), 7558.
18. Feng Wang, Zhenxing Wang*, Lei Yin, Ruiqing Cheng, Junjun Wang, Yao Wen, Tofik Ahmed Shifa, Fengmei Wang, Yu Zhang, Xueying Zhan and Jun He*. 2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection. Chemical Society Reviews 2018, 47, 6296-6341.
19. Feng Wang, Lei Yin , Zhen Xing Wang, Kai Xu, Feng Mei Wang, Tofi k Ahmed Shifa, Yun Huang, Chao Jiang, and Jun He*. Configuration-Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2. Advanced Functional Materials 2016, 26 (30), 5499.
20. Feng Wang, Zhenxing Wang,* Tofik Ahmed Shifa, Yao Wen, Fengmei Wang, Xueying Zhan, Qisheng Wang, Kai Xu, Yun Huang, Lei Yin, Chao Jiang, and Jun He*. Two-Dimensional Non-Layered Materials: Synthesis, Properties and Applications. Advanced Functional Materials 2017, 27 (19), 1603254.